Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

标题
Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 2, Pages 117-119
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2009-12-12
DOI
10.1109/led.2009.2036276

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