Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

出版年份 2011 全文链接

标题

作者

关键词

出版物

Volume 99, Issue 1, Pages 012106

出版商

AIP Publishing

发表日期

2011-07-07

DOI

10.1063/1.3608241

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