Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 35, Issue 12, Pages 1227-1229

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-10-21

DOI

10.1109/led.2014.2360525

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