The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
出版年份 2013 全文链接
标题
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 20, Pages 203507
出版商
AIP Publishing
发表日期
2013-05-24
DOI
10.1063/1.4807577
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices
- (2012) M. G. Cao et al. APPLIED PHYSICS LETTERS
- In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy
- (2012) Thomas Bertaud et al. APPLIED PHYSICS LETTERS
- Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device
- (2012) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment
- (2012) Tsung-Ming Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy
- (2011) Chenxin Zhu et al. APPLIED PHYSICS LETTERS
- Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
- (2011) Yong-En Syu et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- The Effect of Silicon Oxide Based RRAM with Tin Doping
- (2011) Kuan-Chang Chang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
- (2011) Yong-En Syu et al. IEEE ELECTRON DEVICE LETTERS
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- A study of cycling induced degradation mechanisms in Si nanocrystal memory devices
- (2011) Dandan Jiang et al. NANOTECHNOLOGY
- Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
- (2010) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
- Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
- (2010) Chih-Tsung Tsai et al. APPLIED PHYSICS LETTERS
- Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer
- (2010) Chenxin Zhu et al. APPLIED PHYSICS LETTERS
- Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
- (2010) Min-Chen Chen et al. APPLIED PHYSICS LETTERS
- A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application
- (2010) Jing Liu et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
- (2009) Min-Chen Chen et al. APPLIED PHYSICS LETTERS
- Multilevel resistive switching with ionic and metallic filaments
- (2009) Ming Liu et al. APPLIED PHYSICS LETTERS
- Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications
- (2009) Yan Wang et al. NANOTECHNOLOGY
- Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film
- (2009) Xinghua Liu et al. ORGANIC ELECTRONICS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started