Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 36, Issue 1, Pages 26-28

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-11-05

DOI

10.1109/led.2014.2367104

Discuss science. Find collaborators. Network.

Join a conversation

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now