Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps

标题
Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 2, Pages 226-228
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-02-01
DOI
10.1109/led.2013.2291782

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