Standards for the Characterization of Endurance in Resistive Switching Devices

Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory

(2021) Stefan Wiefels et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single‐Atom Quantum‐Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride

(2021) Revannath Dnyandeo Nikam et al.   Small

Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems

(2021) Emilio Pérez-Bosch Quesada et al.   Electronics

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

(2021) Xuehua Li et al.   ADVANCED FUNCTIONAL MATERIALS

Current-limiting amplifier for high speed measurement of resistive switching data

(2021) T. Hennen et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

(2021) Juan B. Roldán et al.   Nanomaterials

Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics

(2021) Yuanyuan Shi et al.   ACS Nano

Advanced Data Encryption ​using 2D Materials

(2021) Chao Wen et al.   ADVANCED MATERIALS

Fully hardware-implemented memristor convolutional neural network

(2020) Peng Yao et al.   NATURE

Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems

(2020) Myungsoo Kim et al.   Nature Electronics

Enhancing Short-Term Plasticity by Inserting a Thin TiO2 Layer in WOx-Based Resistive Switching Memory

(2020) Hyojong Cho et al.   Coatings

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

(2020) Shaochuan Chen et al.   Nature Electronics

Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

(2019) Renjing Xu et al.   NANO LETTERS

Thinnest Nonvolatile Memory Based on Monolayer h-BN

(2019) Xiaohan Wu et al.   ADVANCED MATERIALS

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

(2019) Felix Palumbo et al.   ADVANCED FUNCTIONAL MATERIALS

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

(2019) Fei Xue et al.   ADVANCED MATERIALS

Analog‐Type Resistive Switching Devices for Neuromorphic Computing

(2019) Wenbin Zhang et al.   Physica Status Solidi-Rapid Research Letters

Simulation of Inference Accuracy Using Realistic RRAM Devices

(2019) Adnan Mehonic et al.   Frontiers in Neuroscience

Unsupervised Learning on Resistive Memory Array Based Spiking Neural Networks

(2019) Yilong Guo et al.   Frontiers in Neuroscience

High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

(2019) Yudan Wang et al.   APPLIED PHYSICS LETTERS

Stateful Three-Input Logic with Memristive Switches

(2019) A. Siemon et al.   Scientific Reports

Emerging neuromorphic devices

(2019) Daniele Ielmini et al.   NANOTECHNOLOGY

An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies

(2019) Spyros Stathopoulos et al.   Scientific Reports

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

(2018) Xiaolong Zhao et al.   ADVANCED MATERIALS

Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance

(2018) Shosuke Fujii et al.   IEEE ELECTRON DEVICE LETTERS

Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM

(2018) Alessandro Grossi et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

MoS2 Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation

(2018) Da Li et al.   ACS Nano

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

(2018) Vinod K. Sangwan et al.   NATURE

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses

(2018) Wei Wang et al.   Science Advances

Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

(2018) Herng Yau Yoong et al.   ADVANCED FUNCTIONAL MATERIALS

Solution-processable 2D semiconductors for high-performance large-area electronics

(2018) Zhaoyang Lin et al.   NATURE

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing

(2018) Xiaojian Zhu et al.   NATURE MATERIALS

Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications

(2018) Yang Yang et al.   Nano Energy

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

(2017) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

(2017) Yuchao Yang et al.   JOURNAL OF ELECTROCERAMICS

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

(2017) Ruijing Ge et al.   NANO LETTERS

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

(2017) Sreetosh Goswami et al.   NATURE MATERIALS

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

(2017) Anwar Manzoor Rana et al.   Scientific Reports

Multibit memory operation of metal-oxide bi-layer memristors

(2017) Spyros Stathopoulos et al.   Scientific Reports

Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant

(2016) M. Ismail et al.   ACS Applied Materials & Interfaces

Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition

(2016) Byung Chul Jang et al.   ACS Applied Materials & Interfaces

Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications

(2016) He Tian et al.   ADVANCED MATERIALS

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

(2016) Sen Liu et al.   ADVANCED MATERIALS

Endurance-write-speed tradeoffs in nonvolatile memories

(2016) Dmitri B. Strukov   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Nanosecond Analog Programming of Substoichiometric Silicon Oxide Resistive RAM

(2016) Luca Montesi et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications

(2016) Emmanuelle J Merced-Grafals et al.   NANOTECHNOLOGY

Stack optimization of oxide-based RRAM for fast write speed (

(2016) C.Y. Chen et al.   SOLID-STATE ELECTRONICS

Superior unipolar resistive switching in stacked ZrOx/ZrO2/ZrOx structure

(2016) Cheng-Li Lin et al.   AIP Advances

Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

(2016) Muxi Yu et al.   Scientific Reports

Voltage divider effect for the improvement of variability and endurance of TaOx memristor

(2016) Kyung Min Kim et al.   Scientific Reports

Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor

(2016) Hao Jiang et al.   Scientific Reports

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

(2015) Guoming Wang et al.   APPLIED PHYSICS LETTERS

Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory

(2015) Umesh Chand et al.   APPLIED PHYSICS LETTERS

Normally-off Logic Based on Resistive Switches—Part I: Logic Gates

(2015) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A $\mu $ -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

(2015) Radu Berdan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory

(2015) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector

(2015) Sung Hyun Jo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

(2015) Daniele Garbin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

(2015) M.B. Gonzalez et al.   MICROELECTRONIC ENGINEERING

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

(2015) Peifu Cheng et al.   NANO LETTERS

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

(2015) Vinod K. Sangwan et al.   Nature Nanotechnology

Nanoscale memristive radiofrequency switches

(2015) Shuang Pi et al.   Nature Communications

Oxygenated amorphous carbon for resistive memory applications

(2015) Claudia A. Santini et al.   Nature Communications

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure

(2015) Debanjan Jana et al.   Nano-Micro Letters

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure

(2015) Debanjan Jana et al.   Nano-Micro Letters

Exploiting Memristive BiFeO3Bilayer Structures for Compact Sequential Logics

(2014) Tiangui You et al.   ADVANCED FUNCTIONAL MATERIALS

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

High-performance ferroelectric memory based on fully patterned tunnel junctions

(2014) S. Boyn et al.   APPLIED PHYSICS LETTERS

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Nanoporous Silicon Oxide Memory

(2014) Gunuk Wang et al.   NANO LETTERS

Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

(2014) Chung-Wei Hsu et al.   NANOTECHNOLOGY

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

(2014) Yue Bai et al.   Scientific Reports

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

(2014) Yi-Jiun Chen et al.   Nanoscale Research Letters

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

(2013) Jie Shang et al.   ADVANCED FUNCTIONAL MATERIALS

Transferable and Flexible Label-Like Macromolecular Memory on Arbitrary Substrates with High Performance and a Facile Methodology

(2013) Ying-Chih Lai et al.   ADVANCED MATERIALS

HfOx bipolar resistive memory with robust endurance using ZrNx as buttom electrode

(2013) Qigang Zhou et al.   APPLIED SURFACE SCIENCE

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer

(2013) Huaqiang Wu et al.   IEEE ELECTRON DEVICE LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Performance Memory Device Using Graphene Oxide Flakes Sandwiched Polymethylmethacrylate Layers

(2013) S. Valanarasu et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

(2013) Byung Joon Choi et al.   NANO LETTERS

Stochastic memristive devices for computing and neuromorphic applications

(2013) Siddharth Gaba et al.   Nanoscale

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

(2013) Myoung-Jae Lee et al.   Nature Communications

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

(2013) Run-Chen Fang et al.   Nanoscale Research Letters

Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration

(2013) Amit Prakash et al.   Nanoscale Research Letters

Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1-δFeO3 Interfaces

(2012) Atsushi Tsurumaki et al.   ADVANCED FUNCTIONAL MATERIALS

Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer

(2012) Jung Min Son et al.   APPLIED PHYSICS LETTERS

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

(2012) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

(2012) Sheikh Rahaman et al.   Nanoscale Research Letters

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

(2012) Fu-Chien Chiu et al.   Nanoscale Research Letters

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

(2012) Writam Banerjee et al.   Nanoscale Research Letters

High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

(2011) Zhibo Yan et al.   ADVANCED MATERIALS

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

(2011) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

Supramolecular block copolymers: graphene oxide composites for memory device applications

(2011) An-Dih Yu et al.   CHEMICAL COMMUNICATIONS

Conjugated Polymer-Grafted Reduced Graphene Oxide for Nonvolatile Rewritable Memory

(2011) Bin Zhang et al.   CHEMISTRY-A EUROPEAN JOURNAL

A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

(2011) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

(2011) Hee-Dong Kim et al.   IEEE ELECTRON DEVICE LETTERS

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

(2011) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

(2011) Hee-Dong Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

(2010) Chun-Hu Cheng et al.   ADVANCED MATERIALS

Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

(2010) Xiao-Dong Zhuang et al.   ADVANCED MATERIALS

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

(2010) Kuk-Hwan Kim et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

(2010) S. Z. Rahaman et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

(2010) W.C. Chien et al.   IEEE ELECTRON DEVICE LETTERS

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

(2010) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire

(2010) Kazuki Nagashima et al.   NANO LETTERS

Flexible Organic Bistable Devices Based on Graphene Embedded in an Insulating Poly(methyl methacrylate) Polymer Layer

(2010) Dong Ick Son et al.   NANO LETTERS

Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

(2010) F. Nardi et al.   SOLID-STATE ELECTRONICS

Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex

(2009) Gang Liu et al.   APPLIED PHYSICS LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Highly durable and flexible memory based on resistance switching

(2009) Sungho Kim et al.   SOLID-STATE ELECTRONICS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

(2008) Yoshihiro Sato et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE