Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Role of TaON interface for CuxO resistive switching memory based on a combined model

(2009)   APPLIED PHYSICS LETTERS

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

(2009) Qi Liu et al.   APPLIED PHYSICS LETTERS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS