Voltage divider effect for the improvement of variability and endurance of TaOx memristor

Self-Limited Switching in Ta2O5/TaOxMemristors Exhibiting Uniform Multilevel Changes in Resistance

(2015) Kyung Min Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

(2015) C. Y. Chen et al.   APPLIED PHYSICS LETTERS

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

(2014) Jung Ho Yoon et al.   ADVANCED FUNCTIONAL MATERIALS

Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

(2014) Chung-Wei Hsu et al.   NANOTECHNOLOGY

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

Titanium dioxide thin films for next-generation memory devices

(2012) Seong Keun Kim et al.   JOURNAL OF MATERIALS RESEARCH

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Towards artificial neurons and synapses: a materials point of view

(2012) Doo Seok Jeong et al.   RSC Advances

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution

(2011) Gilberto Medeiros-Ribeiro et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

(2010) Gun Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic

(2009) Qiangfei Xia et al.   NANO LETTERS

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE