Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration

Title
Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
Authors
Keywords
RRAM, Ge/GeO<sub><em class=EmphasisTypeItalic >x</em></sub>, Nanowire, Nanofilament, Oxygen ion migration, Memory
Journal
Nanoscale Research Letters
Volume 8, Issue 1, Pages 220
Publisher
Springer Nature
Online
2013-05-08
DOI
10.1186/1556-276x-8-220

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