Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

Title
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
Authors
Keywords
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Journal
Nanoscale Research Letters
Volume 7, Issue 1, Pages 345
Publisher
Springer Nature
Online
2012-06-27
DOI
10.1186/1556-276x-7-345

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