Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

Published 2019 View Full Article

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Title
Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV
Authors
Keywords
-
Journal
NANO LETTERS
Volume -, Issue -, Pages -
Publisher
American Chemical Society (ACS)
Online
2019-03-21
DOI
10.1021/acs.nanolett.8b05140

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