Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer

(2014) Umesh Chand et al.   IEEE ELECTRON DEVICE LETTERS

Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory

(2014) Chun-Yang Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

(2012) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

(2011) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

(2011) Ming-Chi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS