Enhancing Short-Term Plasticity by Inserting a Thin TiO2 Layer in WOx-Based Resistive Switching Memory

Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor

(2020) Xiao-Di Huang et al.   IEEE ELECTRON DEVICE LETTERS

A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation

(2020) Navnidhi K. Upadhyay et al.   Advanced Electronic Materials

Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application

(2020) Mehr Khalid Rahmani et al.   Results in Physics

Improvement of Sensing Margin and Reset Switching Fail of RRAM

(2019) Woo Young Park et al.   SOLID-STATE ELECTRONICS

Synaptic learning behavior of a TiO2 nanowire memristor

(2019) Bo Zhao et al.   NANOTECHNOLOGY

Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM

(2019) Linlin Cai et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the resistive switching mechanism of parylene-based memristive devices

(2019) Anton A. Minnekhanov et al.   ORGANIC ELECTRONICS

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

(2019) Alexey Mikhaylov et al.   Advanced Materials Technologies

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

(2018) Daniele Ielmini   MICROELECTRONIC ENGINEERING

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

(2018) Sungjun Kim et al.   Small

Alleviating Conductance Nonlinearity via Pulse Shape Designs in TaOx Memristive Synapses

(2018) Shi-Jie Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phase-Change Memory—Towards a Storage-Class Memory

(2017) Scott W. Fong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growth of HfO2/TiO2nanolaminates by atomic layer deposition and HfO2-TiO2by atomic partial layer deposition

(2017) H. Hernández-Arriaga et al.   JOURNAL OF APPLIED PHYSICS

Reservoir computing using dynamic memristors for temporal information processing

(2017) Chao Du et al.   Nature Communications

Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces

(2017) Seokjae Won et al.   Scientific Reports

Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure

(2016) Jongmin Kim et al.   ACS Applied Materials & Interfaces

Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2Bilayer RRAM Array for Neuromorphic Systems

(2016) Jiyong Woo et al.   IEEE ELECTRON DEVICE LETTERS

Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties

(2016) P. Bousoulas et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation

(2015) Tsung-Ling Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Rational syntheses of core–shell Fe@(PtRu) nanoparticle electrocatalysts for the methanol oxidation reaction with complete suppression of CO-poisoning and highly enhanced activity

(2015) Md. Abdul Matin et al.   Journal of Materials Chemistry A

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

(2014) Sukru B. Eryilmaz et al.   Frontiers in Neuroscience

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

(2013) Shimeng Yu et al.   ADVANCED MATERIALS

Spike-timing dependent plasticity in a transistor-selected resistive switching memory

(2013) S Ambrogio et al.   NANOTECHNOLOGY

Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation

(2013) Rui Yang et al.   NANOTECHNOLOGY

Ultrafast Synaptic Events in a Chalcogenide Memristor

(2013) Yi Li et al.   Scientific Reports

Silicon introduced effect on resistive switching characteristics of WOX thin films

(2012) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

(2011) Ting Chang et al.   ACS Nano

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

(2011) Seo Hyoung Chang et al.   ADVANCED MATERIALS

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

(2011) Yoon Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching characteristics and mechanism of thermally grown WOx thin films

(2011) Kuyyadi P. Biju et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS