Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

(2011) Hee-Dong Kim et al.   JOURNAL OF APPLIED PHYSICS

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM

(2010) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells

(2010) Hee-Dong Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices

(2009) Lei Shi et al.   Applied Physics Express

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

(2008) Yoshihiro Sato et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES