Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

Title
Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films
Authors
Keywords
-
Journal
Nanoscale Research Letters
Volume 7, Issue 1, Pages 178
Publisher
Springer Nature
Online
2012-03-08
DOI
10.1186/1556-276x-7-178

Ask authors/readers for more resources

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now