Recommended Methods to Study Resistive Switching Devices

Experimental Observation and Mitigation of Dielectric Screening in Hexagonal Boron Nitride Based Resistive Switching Devices

(2018) Bingru Wang et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Repeated roll-to-roll transfer of two-dimensional materials by electrochemical delamination

(2018) M. Hempel et al.   Nanoscale

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

(2018) Vinod K. Sangwan et al.   NATURE

Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device Operation

(2017) Keumdong Jung et al.   IEEE ELECTRON DEVICE LETTERS

Ultrafast Accelerated Retention Test Methodology for RRAM Using Micro Thermal Stage

(2017) Ziwen Wang et al.   IEEE ELECTRON DEVICE LETTERS

SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

(2017) German A. Patterson et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

(2017) S Aldana et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

(2017) Ruijing Ge et al.   NANO LETTERS

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts

(2017) Kechao Tang et al.   NANO LETTERS

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability

(2017) Tae Hyung Park et al.   Nanoscale

Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device

(2017) Gun Hwan Kim et al.   Small

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

Multiscale modeling of oxide RRAM devices for memory applications: from material properties to device performance

(2017) Luca Larcher et al.   Journal of Computational Electronics

$${ SIM}^2{ RRAM}$$ S I M 2 R R A M : a physical model for RRAM devices simulation

(2017) Marco A. Villena et al.   Journal of Computational Electronics

Spatially Resolved Thermometry of Resistive Memory Devices

(2017) Eilam Yalon et al.   Scientific Reports

Properties of Dopants in HfOx for Improving the Performance of Nonvolatile Memory

(2017) Dan Duncan et al.   Physical Review Applied

Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox-Based Resistive Switching Cells using a High-Speed Nanoheater

(2017) Moritz von Witzleben et al.   Advanced Electronic Materials

Graphene and Related Materials for Resistive Random Access Memories

(2017) Fei Hui et al.   Advanced Electronic Materials

Nanoscale Bipolar Electrical Switching of Ge2 Sb2 Te5 Phase-Change Material Thin Films

(2017) Xinxing Sun et al.   Advanced Electronic Materials

High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

(2016) Chanyoung Yim et al.   ACS Nano

Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

(2016) Marco Moors et al.   ACS Nano

Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications

(2016) Kai Qian et al.   ADVANCED FUNCTIONAL MATERIALS

Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications

(2016) Chunxue Hao et al.   ADVANCED FUNCTIONAL MATERIALS

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

(2016) Yanfeng Ji et al.   APPLIED PHYSICS LETTERS

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

(2016) Dan Duncan et al.   IEEE ELECTRON DEVICE LETTERS

Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices

(2016) Yuchao Yang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM

(2016) A. Ranjan et al.   MICROELECTRONICS RELIABILITY

SANTA: Self-aligned nanotrench ablation via Joule heating for probing sub-20 nm devices

(2016) Feng Xiong et al.   Nano Research

Relaxation oscillator-realized artificial electronic neurons, their responses, and noise

(2016) Hyungkwang Lim et al.   Nanoscale

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

3D resistive RAM cell design for high-density storage class memory—a review

(2016) Boris Hudec et al.   Science China-Information Sciences

A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach

(2016) G González-Cordero et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example

(2016) K. D. M. Rao et al.   Advanced Electronic Materials

Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

(2016) M. Prezioso et al.   Scientific Reports

Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

(2015) Sarah M. Eichfeld et al.   ACS Nano

Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

(2015) Grzegorz Lupina et al.   ACS Nano

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

(2015) Michael Lübben et al.   ADVANCED MATERIALS

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

(2015) Jung Ho Yoon et al.   ADVANCED MATERIALS

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

(2015) Liang Zhao et al.   APPLIED PHYSICS LETTERS

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

(2015) C. Y. Chen et al.   APPLIED PHYSICS LETTERS

Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

(2015) Chaoliang Tan et al.   CHEMICAL SOCIETY REVIEWS

1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays

(2015) Chiyui Ahn et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A SPICE Compact Model for Unipolar RRAM Reset Process Analysis

(2015) Francisco Jimenez-Molinos et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

(2015) Andrea Padovani et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

(2015) Pai-Yu Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nucleation Control for Large, Single Crystalline Domains of Monolayer Hexagonal Boron Nitride via Si-Doped Fe Catalysts

(2015) Sabina Caneva et al.   NANO LETTERS

Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching

(2015) William A. Hubbard et al.   NANO LETTERS

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

(2015) Peifu Cheng et al.   NANO LETTERS

Grain Boundary Structures and Electronic Properties of Hexagonal Boron Nitride on Cu(111)

(2015) Qiucheng Li et al.   NANO LETTERS

Multilevel memristor effect in metal–semiconductor core–shell nanoparticles tested by scanning tunneling spectroscopy

(2015) Sudipto Chakrabarti et al.   Nanoscale

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

(2015) Stephan Menzel et al.   Nanoscale

Annealing free, clean graphene transfer using alternative polymer scaffolds

(2015) Joshua D Wood et al.   NANOTECHNOLOGY

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

(2015) Vinod K. Sangwan et al.   Nature Nanotechnology

Study of the resistive switching of vertically aligned carbon nanotubes by scanning tunneling microscopy

(2015) O. A. Ageev et al.   PHYSICS OF THE SOLID STATE

An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

(2015) M.A. Villena et al.   SOLID-STATE ELECTRONICS

Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy

(2015) Guangyuan Lu et al.   Nature Communications

Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

(2015) Keundong Lee et al.   Scientific Reports

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

(2015) Tae Hyung Park et al.   Scientific Reports

Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles

(2015) Yuanyuan Shi et al.   Scientific Reports

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

(2015) Lai-Guo Wang et al.   Nanoscale Research Letters

Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

Low Variability Resistor-Memristor Circuit Masking the Actual Memristor States

(2015) Kyung Min Kim et al.   Advanced Electronic Materials

Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices

(2015) Xing Wu et al.   Advanced Electronic Materials

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

(2015) Mohamed Ghoneim et al.   Electronics

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

(2014) Marc Bocquet et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

(2014) Qian Wu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simulation of thermal reset transitions in resistive switching memories including quantum effects

(2014) M. A. Villena et al.   JOURNAL OF APPLIED PHYSICS

Dielectric Screening in Atomically Thin Boron Nitride Nanosheets

(2014) Lu Hua Li et al.   NANO LETTERS

Programmable Resistive-Switch Nanowire Transistor Logic Circuits

(2014) Wooyoung Shim et al.   NANO LETTERS

Advanced scanning probe lithography

(2014) Ricardo Garcia et al.   Nature Nanotechnology

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

(2014) Yuchao Yang et al.   Nature Communications

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory

(2014) Alessandro Gambardella et al.   Scientific Reports

High-Performance Piezoelectric Nanogenerators Using Two-Dimensional Flexible Top Electrodes

(2014) M. Lanza et al.   Advanced Materials Interfaces

Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

(2013) Cheng-Lin Tsai et al.   ACS Nano

Simplistic graphene transfer process and its impact on contact resistance

(2013) Mohamed T. Ghoneim et al.   APPLIED PHYSICS LETTERS

Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes

(2013) Andrew G. Scheuermann et al.   Energy & Environmental Science

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

(2013) Peng Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

(2013) Attilio Belmonte et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

SPICE modeling of nonlinear memristive behavior

(2013) Ioannis Vourkas et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation

(2013) Peng Huang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

An in-depth simulation study of thermal reset transitions in resistive switching memories

(2013) M. A. Villena et al.   JOURNAL OF APPLIED PHYSICS

Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation

(2013) M. Lanza et al.   JOURNAL OF APPLIED PHYSICS

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

(2013) Vincent Dubost et al.   NANO LETTERS

Electrical and mechanical performance of graphene sheets exposed to oxidative environments

(2013) Mario Lanza et al.   Nano Research

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy

(2013) O. A. Ageev et al.   TECHNICAL PHYSICS

Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films

(2013) Yifei Yu et al.   Scientific Reports

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

(2012) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Analysis of Complementary RRAM Switching

(2012) Dirk J. Wouters et al.   IEEE ELECTRON DEVICE LETTERS

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

(2012) Ximeng Guan et al.   IEEE ELECTRON DEVICE LETTERS

An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput

(2012) Akifumi Kawahara et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Memristive Behavior of ZnO/Au Film Investigated by a TiN CAFM Tip and Its Model Based on the Experiments

(2012) Wenhong Wang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

(2012) V. Iglesias et al.   MICROELECTRONICS RELIABILITY

CMOS: compatible wafer bonding for MEMS and wafer-level 3D integration

(2012) Viorel Dragoi et al.   MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

(2012) Bharti Singh et al.   NANOTECHNOLOGY

Evaluation of the local temperature of conductive filaments in resistive switching materials

(2012) E Yalon et al.   NANOTECHNOLOGY

Electrically tailored resistance switching in silicon oxide

(2012) Adnan Mehonic et al.   NANOTECHNOLOGY

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Direct Nanoscale Observation of Resistance Switching with Au Nano-Dots Embedded Nb2O5 by Scanning Tunneling Microscopy

(2012) M. K. Hota et al.   Nanoscience and Nanotechnology Letters

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

(2011) V. Iglesias et al.   APPLIED PHYSICS LETTERS

Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

(2011) Marc Bocquet et al.   APPLIED PHYSICS LETTERS

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

(2011) Allen Hsu et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

(2011) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

(2011) Ming-Chi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor

(2011) E. Yalon et al.   IEEE ELECTRON DEVICE LETTERS

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

(2011) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs

(2011) V. Jousseaume et al.   SOLID-STATE ELECTRONICS

Irradiation damage in graphene on SiO2 probed by local mobility measurements

(2010) F. Giannazzo et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions

(2010) A. Plecenik et al.   APPLIED SURFACE SCIENCE

Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films

(2010) Ruth Muenstermann et al.   JOURNAL OF APPLIED PHYSICS

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

(2010) M. Lanza et al.   MICROELECTRONICS RELIABILITY

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

(2010) M. Lanza et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Time-dependent electroforming in NiO resistive switching devices

(2009) Gyoung-Ho Buh et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching in graphene oxide thin films

(2009) C. L. He et al.   APPLIED PHYSICS LETTERS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Combined Nanoscale and Device-Level Degradation Analysis of $\hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices

(2009) M. Lanza et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

(2009) Ludovic Goux et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

(2009) Xun Cao et al.   JOURNAL OF APPLIED PHYSICS

A review of plasma enhanced chemical vapour deposition of carbon nanotubes

(2009) M Meyyappan   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Breakdown and degradation of ultrathin Hf-based (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] gate oxide films

(2009) H. J. Uppal et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability

(2009) L. Aguilera et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS

Statistical characterization of the memory effect in polyfluorene based non-volatile resistive memory devices

(2009) Bao Lei et al.   ORGANIC ELECTRONICS

Novel Rewritable, Non-volatile Memory Devices Based on Thermally and Dimensionally Stable Polyimide Thin Films

(2008) Suk Gyu Hahm et al.   ADVANCED FUNCTIONAL MATERIALS

Erasing characteristics of Cu[sub 2]O metal-insulator-metal resistive switching memory

(2008) A. Chen et al.   APPLIED PHYSICS LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Nonvolatile Switching in Graphene Field-Effect Devices

(2008) T.J. Echtermeyer et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Graphene-Based Atomic-Scale Switches

(2008) Brian Standley et al.   NANO LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Periodically Rippled Graphene: Growth and Spatially Resolved Electronic Structure

(2008) A. L. Vázquez de Parga et al.   PHYSICAL REVIEW LETTERS

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter

(2008) L. Aguilera et al.   REVIEW OF SCIENTIFIC INSTRUMENTS