Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure
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Title
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure
Authors
Keywords
CrO<sub><em class=EmphasisTypeItalic >x</em></sub>, TiO<sub><em class=EmphasisTypeItalic >x</em></sub>, Resistive switching memory, Slope/shape factor, Device size
Journal
Nano-Micro Letters
Volume 7, Issue 4, Pages 392-399
Publisher
Springer Nature
Online
2015-07-31
DOI
10.1007/s40820-015-0055-3
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