Article
Chemistry, Multidisciplinary
Mahmoud N. Almadhoun, Maximilian Speckbacher, Brian C. Olsen, Erik J. Luber, Sayed Youssef Sayed, Marc Tornow, Jillian M. Buriak
Summary: The study demonstrates memristive behavior in Ga/GaOx/SiOx/p(+)-Si junctions, with a reversible insulator-metal transition and high ON/OFF ratio. The presence of a nanoscale gallium oxide layer plays a critical role in achieving reversible resistive switching.
Article
Materials Science, Multidisciplinary
Hojeong Ryu, Beomjun Park, Sungjun Kim
Summary: This work demonstrates threshold switching and bipolar resistive switching in TiN/TaOx/ITO memristor device, showing different mechanisms for switching and resistive state modulation under positive and negative biases.
Article
Chemistry, Multidisciplinary
Ivana Zrinski, Cezarina Cela Mardare, Luiza-Izabela Jinga, Jan Philipp Kollender, Gabriel Socol, Alexey Minenkov, Achim Walter Hassel, Andrei Ionut Mardare
Summary: Anodic HfO2 memristors grown in different electrolytes exhibit varying performance, with citrate showing superior properties while borate performs the weakest. Various tests were conducted on the memristors, including the influence of low temperature heating and the stability of operation at high temperatures.
Article
Chemistry, Analytical
Eugeny Ryndin, Natalia Andreeva, Victor Luchinin
Summary: The article presents the development and study of a combined circuitry model of thin metal oxide films based memristive elements, which can simulate both bipolar switching processes and multilevel tuning of the memristor conductivity, while taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching.
Article
Nanoscience & Nanotechnology
Timea Nora Torok, Janos Gergo Fehervari, Gabor Meszaros, Laszlo Posa, Andras Halbritter
Summary: Resistive switching memory devices have the potential to achieve artificial neural networks and nonconventional computing. Studying single resistive switching elements is crucial for utilizing their characteristics for computation. The variability of set time, the timespan before the transition from a high-resistance OFF state to a low-resistance ON state, is key to utilizing the inherent stochasticity of resistance switching. In this study, the set time statistics in nanometer-sized graphene-SiOx-graphene resistive switching memory devices were investigated. The study demonstrated a universal variance of logarithmic set time values, which is characteristic of a nucleation-driven crystallization process. The correlation between OFF state resistance and set time was observed and the tunability of set time statistics was explored by changing the reset amplitude parameter in sequential pulsed measurements. This phenomenon could be useful for controlling stochasticity in memristor-based probabilistic computing applications.
ACS APPLIED NANO MATERIALS
(2022)
Article
Materials Science, Ceramics
Hee Ju Yun, Sung Yeon Ryu, Ha Young Lee, Woo Young Park, Soo Gil Kim, Byung Joon Choi
Summary: Rare-earth oxide materials show interesting resistive switching properties in resistive switching memory. Post-deposition annealing of GdOx films enhances the tunability of resistance states, which is beneficial for multi-level operation. The effects of crystallization and hygroscopic nature of GdOx film on resistive switching characteristics are investigated.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Electrical & Electronic
Pradip Basnet, Erik C. Anderson, Fabia Farlin Athena, Bhaswar Chakrabarti, Matthew P. West, Eric M. Vogel
Summary: Understanding the resistance switching behavior of oxide-based memristive devices is crucial for their application in nonvolatile memory and artificial neural networks. This study investigates the improved performance of oxide memristors with bi-or multilayered metal oxide thin films. The researchers fabricated bilayered heterostructure devices and examined their electrical responses, revealing a digital set and an analog reset transition process. The results suggest that proper combinations of materials, optimized structures, and test conditions can achieve synergistic switching performance in double-or multilayered memristive devices.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Pradip Basnet, Erik C. Anderson, Fabia Farlin Athena, Bhaswar Chakrabarti, Matthew P. West, Eric M. Vogel
Summary: Understanding the resistance switching behavior of oxide-based memristive devices is crucial for evaluating their utility in nonvolatile memory and artificial neural networks. This study investigates the performance improvement mechanisms of bi-or multilayered metal oxide thin films in oxide memristors. Bilayer devices with HfOx/AlOy and AlOy/HfOx films sandwiched between Au electrodes are fabricated and their electrical responses reveal digital set and analog reset transitions. The role of these bilayered heterostructures is investigated through experimental and simulated results, providing insights for designing efficient double-or multilayered memristive devices with analog responses.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Multidisciplinary Sciences
Darshika Khone, Sandeep Kumar, Mohammad Balal, Sudipta Roy Barman, Sunil Kumar, Abhimanyu Singh Rana
Summary: Highly transparent resistive-switching devices were fabricated and their characteristics could be tuned by adjusting the top electrode and film thickness.
SCIENTIFIC REPORTS
(2023)
Article
Chemistry, Multidisciplinary
Ivana Zrinski, Marvin Loeefler, Janez Zavasnik, Claudia Cancellieri, Lars P. H. Jeurgens, Achim Walter Hassel, Andrei Ionut Mardare
Summary: The aim of this study was to develop memristors based on Nb2O5 by a simple and inexpensive electrochemical anodization process. It was found that the selection of electrolyte played an important role in resistive switching. Anodic memristors grown in phosphate buffer showed improved electrical characteristics, while those formed in citrated buffer exhibited excellent memory capabilities. The chemical composition of oxides was successfully determined using HAXPES and their phase composition and crystal structure were evaluated by TEM.
Article
Materials Science, Multidisciplinary
Harshit Sharma, Nitish Saini, Ajeet Kumar, Ritu Srivastava
Summary: This study proposes a solution-processed ternary metal chalcogenide AgBiS2 quantum dots as a functional layer in a memristive device, exhibiting electroforming-free resistive switching with low power consumption. The working mechanism involves the migration of electrochemically active Ag metal ions and sulfur vacancies to form a conductive filament. Multiple quantum conductance levels are achieved by controlling the compliance current during the set process, making this device suitable for ultra-high density multi-level memory applications with low power consumption.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Chemistry, Physical
Km Komal, Govind Gupta, Mukhtiyar Singh, Bharti Singh
Summary: The resistive switching performance of reduced graphene oxide (RGO) and tin oxide (SnO2) based nanocomposite has been investigated in this study. The nanocomposite showed improved resistive switching compared to pure SnO2 film, with reduced operating voltage and enhanced resistance ratio. The fabricated composite film-based device exhibited good retention and endurance behavior. These findings suggest great potential for future non-volatile memory devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Physical
Kaijin Kang, Wei Hu, Xiaosheng Tang
Summary: This Perspective provides a condensed overview of halide perovskite RRAMs, including materials, device performance, switching mechanism, and potential applications. The challenges of halide perovskite films, device fabrication, memory performance reliability, and understanding of switching mechanism are discussed, along with potential paths for future research.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Alok Ranjan, Hejun Xu, Chaolun Wang, Joel Molina, Xing Wu, Hui Zhang, Litao Sun, Junhao Chu, Kin Leong Pey
Summary: In this study, the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks was investigated using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. The change in conductance of the HfO2/Al2O3 stack during electrical stressing is attributed to the formation of extended nanoscale defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. Two competing physical mechanisms, oxygen ion redistribution and Al species migration, were found to be involved in the switching process. The low diffusion barrier of the active Al electrode causes severe Al migration in the bilayered oxides, leading to device failure in resetting and limiting overall switching performance and material reliability.
APPLIED MATERIALS TODAY
(2023)
Article
Materials Science, Ceramics
Srikant Kumar Mohanty, Debashis Panda, K. Poshan Kumar Reddy, Po-Tsung Lee, Chien-Hung Wu, Kow-Ming Chang
Summary: This study demonstrates that the HfOx-inserted TaOx memristor is an ideal synaptic device with analog switching ability for brain-inspired neuromorphic computing. By inserting a HfOx sandwiched layer, analog set/reset operations can be achieved along with improved switching uniformity. The research further proves that the HfOx-inserted TaOx memristor has great potential for future applications in neuromorphic computing.
CERAMICS INTERNATIONAL
(2023)
Review
Chemistry, Multidisciplinary
Mario Lanza, Fei Hui, Chao Wen, Andrea C. Ferrari
Summary: Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>10(8) devices mm(-)(2)) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Sebastian Pazos, Wenwen Zheng, Tommaso Zanotti, Fernando Aguirre, Thales Becker, Yaqing Shen, Kaichen Zhu, Yue Yuan, Gilson Wirth, Francesco Maria Puglisi, Juan Bautista Roldan, Felix Palumbo, Mario Lanza
Summary: The development of the internet-of-things requires cheap and reliable true random number generator (TRNG) circuits for data encryption. However, existing solutions consume too much power and hinder integration. This study presents a TRNG circuit using stable random telegraph noise (RTN) signals produced by h-BN memristors, enabling a highly-stochastic and high-throughput signal even with interruptions.
Article
Nanoscience & Nanotechnology
Christian Acal, David Maldonado, Ana M. Aguilera, Kaichen Zhu, Mario Lanza, Juan Bautista Roldan
Summary: We propose a new methodology to quantify the variability of resistive switching memories by taking into account the whole I-V curve measured in each RS cycle. This approach provides a comprehensive variability metric (2DVC) that reveals additional variability information compared to traditional one-dimensional analytical methods. It enhances our understanding of the functioning of resistive switching memories.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Jonas Weber, Yue Yuan, Fabian Kuehnel, Christoph Metzke, Josef Schaetz, Werner Frammelsberger, Guenther Benstetter, Mario Lanza
Summary: Conductive atomic force microscopy (CAFM) is a powerful technique for studying electrical and mechanical properties at the nanoscale. The reliability of probe tips is a major challenge in CAFM, and solid Pt probes offer a more durable and reliable alternative to metal-coated silicon tips. The use of solid Pt probes can enhance the reliability of CAFM experiments by providing similar performance in terms of lateral resolution and a longer lifetime.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Deok-Yong Cho, Ki-jeong Kim, Kug-Seung Lee, Michael Lubben, Shaochuan Chen, Ilia Valov
Summary: Thin layers inserted between a metal electrode and a solid electrolyte can modify the transport of mass and charge at interfaces and affect electrode reactions. Incorporating C films in functional materials can alter the host's chemical properties and device functionalities. Using X-ray spectroscopies, it was found that inserting graphene or ultrathin amorphous C layers in a Ta2O5/Ta system can tune its chemical and electronic structures, thereby fundamentally changing the resistive switching functionalities.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Review
Chemistry, Multidisciplinary
Sebastian Pazos, Thales Becker, Marco Antonio Villena, Wenwen Zheng, Yaqing Shen, Yue Yuan, Osamah Alharbi, Kaichen Zhu, Juan Bautista Roldan, Gilson Wirth, Felix Palumbo, Mario Lanza
Summary: Memristor-based electronic memory, although still having a small market size, shows potential in hardware implementation of artificial neural networks, advanced data encryption, and high-frequency switches for 5G/6G communication. However, improvements in performance and reliability are necessary to increase market size and meet technology standards. Researchers are exploring novel nano-materials like multilayer hexagonal boron nitride (h-BN) to address these challenges and have conducted in-depth analysis on current noise, dielectric breakdown growth, and ambipolar resistive switching in memristors. The findings reveal the potential and limitations of these materials for memristive applications. Rating: 8/10.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Shaochuan Chen, Teng Zhang, Stefan Tappertzhofen, Yuchao Yang, Ilia Valov
Summary: Artificial neurons and synapses are crucial for the development of brain-inspired computing beyond von Neumann architectures. This article discusses the electrochemical fundamentals shared by biological and artificial cells, particularly their similarities with redox-based memristive devices. The driving forces and methods for controlling the functionalities through an electrochemical-materials approach are presented. Essential factors in understanding and designing artificial neurons and synapses, such as electrode symmetry, doping of solid electrolytes, concentration gradients, and excess surface energy, are discussed. Various memristive devices and architectures are showcased, along with their applications in problem-solving. The article provides an overview of neural signal generation and transmission in biological and artificial cells and highlights the potential for bioelectronic interfaces and integration of artificial circuits in biological systems. Prospects and challenges for low-power, high-information-density circuits are emphasized.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Nicolas Calarco, Matias Cordoba, Lucas Mombello, Joel Gak, Martin Lorenzatto, Sebastian Pazos, Jose Lipovetzky, Fernando Perez Quintian
Summary: This paper presents a self-configuration system and frequency characterization analysis for a fully integrated CMOS photodetector sensor. The sensor consists of pixels with programmable switches, allowing the synthesis of arbitrary detection patterns. The self-configuration routine aims to locate the center of an incident non-diffractive beam and configure the detection pattern accordingly. The frequency response of the analog front-end of the chip is analyzed, and future improvements to the design are proposed based on the results.
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
(2023)
Article
Physics, Applied
H. Garcia, G. Vinuesa, E. Garcia-Ochoa, F. L. Aguirre, M. B. Gonzalez, F. Jimenez-Molinos, F. Campabadal, J. B. Roldan, E. Miranda, S. Duenas, H. Castan
Summary: The effect of applied voltage ramp rate on the electrical properties of metal-insulator-metal resistive switching devices has been studied. It is shown that higher ramp rates allow control over the resistance values, which suggests a new way to program synaptic weights in neuromorphic engineering applications.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Multidisciplinary Sciences
Kaichen Zhu, Sebastian Pazos, Fernando Aguirre, Yaqing Shen, Yue Yuan, Wenwen Zheng, Osamah Alharbi, Marco A. Villena, Bin Fang, Xinyi Li, Alessandro Milozzi, Matteo Farronato, Miguel Munoz-Rojo, Tao Wang, Ren Li, Hossein Fariborzi, Juan B. Roldan, Guenther Benstetter, Xixiang Zhang, Husam N. Alshareef, Tibor Grasser, Huaqiang Wu, Daniele Ielmini, Mario Lanza
Summary: In this study, high-integration-density 2D-CMOS hybrid microchips for memristive applications were fabricated, with CMOS transistors providing excellent control over hexagonal boron nitride memristors. Logic gates were constructed, and spike-timing dependent plasticity signals suitable for spiking neural networks were measured.
Article
Quantum Science & Technology
Jordi Sune, Fernando Aguirre, Mireia Bargallo Gonzalez, Francesca Campabadal, Enrique Miranda
Summary: Ballistic conduction through narrow constrictions connecting charge reservoirs displays conductance quantization effects, which could be used to implement a resistance standard fulfilling the requirements of the 2019 revised International System of Units. The authors propose using breakdown filaments in thin oxide layers for this purpose and analyze the effects of intrinsic conductance values and extrinsic parasitic elements. Although sample-to-sample variations are currently too large, controlling the breakdown filaments through material design and electroforming conditions could enable the on-chip implementation of a resistance standard.
ADVANCED QUANTUM TECHNOLOGIES
(2023)
Review
Chemistry, Multidisciplinary
Min-Kyu Song, Ji-Hoon Kang, Xinyuan Zhang, Wonjae Ji, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Bowei Dong, Samarth Aggarwal, Weier Wan, Seok-Man Hong, Suma George Cardwell, Irem Boybat, Jae-sun Seo, Jang-Sik Lee, Mario Lanza, Hanwool Yeon, Murat Onen, Ju Li, Bilge Yildiz, Jesus A. del Alamo, Seyoung Kim, Shinhyun Choi, Gianluca Milano, Carlo Ricciardi, Lambert Alff, Yang Chai, Zhongrui Wang, Harish Bhaskaran, Mark C. Hersam, Dmitri Strukov, H. -S. Philip Wong, Ilia Valov, Bin Gao, Huaqiang Wu, Ronald Tetzlaff, Abu Sebastian, Wei Lu, Leon Chua, J. Joshua Yang, Jeehwan Kim
Summary: Memristive technology, with oxide-based resistive switches as memristors, has gained significant attention due to its biomimetic memory properties and potential improvement in power consumption. This review provides a comprehensive overview of recent advances in memristive technology, including devices, theory, algorithms, architectures, and systems. It also discusses research directions for applications in AI hardware accelerators, in-sensor computing, and probabilistic computing. Furthermore, it offers a forward-looking perspective, outlining challenges and opportunities for further research and innovation in this field.
Article
Nanoscience & Nanotechnology
Tumesh Kumar Sahu, Nishant Kumar, Sumit Chahal, Rajkumar Jana, Sumana Paul, Moumita Mukherjee, Amir H. Tavabi, Ayan Datta, Rafal E. Dunin-Borkowski, Ilia Valov, Alpana Nayak, Prashant Kumar
Summary: Researchers have discovered a new two-dimensional material called molybdenene, which has metallic character and can be hybridized with other materials to exhibit tunable optical and electronic properties. The study also demonstrates the applications of molybdenene in molecular sensing, electron imaging, and scanning probe microscopy.
NATURE NANOTECHNOLOGY
(2023)