HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

Published 2013 View Full Article

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Title
HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
Authors
Keywords
-
Journal
ACS Nano
Volume 7, Issue 3, Pages 2320-2325
Publisher
American Chemical Society (ACS)
Online
2013-02-15
DOI
10.1021/nn305510u

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