An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

Published 2011 View Full Article

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Title
An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 8, Pages 2729-2737
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-06-17
DOI
10.1109/ted.2011.2147791

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