Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant

(2016) M. Ismail et al.   ACS Applied Materials & Interfaces

3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices

(2016) W. Kim et al.   IEEE ELECTRON DEVICE LETTERS

Multi-mode resistive switching behaviors induced by modifying Ti interlayer thickness and operation scheme

(2016) M.J. Wang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Controlled hydrothermal synthesis of triangular CeO 2 nanosheets and their formation mechanism and optical properties

(2016) Jinfeng Gong et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Stability, bistability and instability of amorphous ZrO2resistive memory devices

(2016) P Parreira et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes

(2015) Hyoung-il Kim et al.   Energy & Environmental Science

Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

(2015) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications

(2015) Muhammad Ismail et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells

(2015) Muhammad Ismail et al.   THIN SOLID FILMS

Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

(2015) Ke-Jing Lee et al.   Materials

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

(2015) Adnan Younis et al.   Scientific Reports

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

(2015) Ee Lim et al.   Electronics

Understanding Photoluminescence of Monodispersed Crystalline Anatase TiO2 Nanotube Arrays

(2014) Hyunjun Yoo et al.   Journal of Physical Chemistry C

Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

(2014) W H Xue et al.   NANOTECHNOLOGY

Forming-free bipolar resistive switching in nonstoichiometric ceria films

(2014) Muhammad Ismail et al.   Nanoscale Research Letters

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

(2013) V. Y.-Q. Zhuo et al.   APPLIED PHYSICS LETTERS

Evidence of oxygen vacancy induced room temperature ferromagnetism in solvothermally synthesized undoped TiO2 nanoribbons

(2013) Batakrushna Santara et al.   Nanoscale

The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM

(2013) Hongbin Zhao et al.   SOLID-STATE ELECTRONICS

Growth, dielectric properties, and memory device applications of ZrO2 thin films

(2013) Debashis Panda et al.   THIN SOLID FILMS

Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement

(2013) Qigang Zhou et al.   AIP Advances

Effects of electrode material and configuration on the characteristics of planar resistive switching devices

(2013) H. Y. Peng et al.   APL Materials

Mechanism for resistive switching in an oxide-based electrochemical metallization memory

(2012) Shanshan Peng et al.   APPLIED PHYSICS LETTERS

Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

(2012) Somnath Mondal et al.   IEEE ELECTRON DEVICE LETTERS

High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

(2012) Wen-Yuan Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Improved bipolar resistive switching properties in CeO2/ZnO stacked heterostructures

(2012) Yongdan Zhu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The Effect of Al and Ni Top Electrodes in Resistive Switching Behaviors of Yb2O3-Based Memory Cells

(2012) S. Mondal et al.   ECS Solid State Letters

Top electrode effects on resistive switching behavior in CuO thin films

(2011) Ying Li et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films

(2011) Wen-Yuan Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films

(2010) Xu Gao et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Porous CeO2 nanowires/nanowire arrays: electrochemical synthesis and application in water treatment

(2010) Xi-hong Lu et al.   JOURNAL OF MATERIALS CHEMISTRY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Role of TaON interface for CuxO resistive switching memory based on a combined model

(2009)   APPLIED PHYSICS LETTERS

Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2

(2009) Kashinath A. Bogle et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

(2009) Y. C. Yang et al.   JOURNAL OF APPLIED PHYSICS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films

(2008) Chih-Yang Lin et al.   SURFACE & COATINGS TECHNOLOGY