Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

Published 2011 View Full Article

Authors

Keywords

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume 58, Issue 10, Pages 3566-3573

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2011-08-25

DOI

10.1109/ted.2011.2162518

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IEEE TRANSACTIONS ON ELECTRON DEVICES

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Reagent

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