Stochastic memristive devices for computing and neuromorphic applications

On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

(2012) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

(2012) Wei Lu et al.   MRS BULLETIN

Going active

(2012) Wei Lu   NATURE MATERIALS

A scalable neuristor built with Mott memristors

(2012) Matthew D. Pickett et al.   NATURE MATERIALS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

Device and SPICE modeling of RRAM devices

(2011) Patrick Sheridan et al.   Nanoscale

Measuring the switching dynamics and energy efficiency of tantalum oxide memristors

(2011) John Paul Strachan et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Self-Adaptive Write Circuit for Low-Power and Variation-Tolerant Memristors

(2010) Kwan-Hee Jo et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

(2010) Herbert Schroeder et al.   JOURNAL OF APPLIED PHYSICS

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

(2008) Sung Hyun Jo et al.   NANO LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE