Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 3, Pages 033506
Publisher
AIP Publishing
Online
2008-07-23
DOI
10.1063/1.2959065
References
View 1 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.