Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

Controlling Work Function and Damaging Effects of Sputtered RuO2 Gate Electrodes by Changing Oxygen Gas Ratio during Sputtering

(2013) Hyo Kyeom Kim et al.   ACS Applied Materials & Interfaces

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials

(2013) Sang Woon Lee et al.   COORDINATION CHEMISTRY REVIEWS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

(2008) Seong Keun Kim et al.   ADVANCED MATERIALS