HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

Published 2017 View Full Article

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Title
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 6, Pages 732-735
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-05-13
DOI
10.1109/led.2017.2698083

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