Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

(2017) Karine Florent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

An extensive study of the influence of dopants on the ferroelectric properties of HfO2

(2017) S. Starschich et al.   Journal of Materials Chemistry C

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

Broadband enhancement of infrared absorption in microbolometers using Ag nanocrystals

(2015) Jerome K. Hyun et al.   APPLIED PHYSICS LETTERS

Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

(2015) Patrick D. Lomenzo et al.   IEEE ELECTRON DEVICE LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrode

(2014) Takao Shimizu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

(2014) Min Hyuk Park et al.   Physica Status Solidi-Rapid Research Letters

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

(2012) Ekaterina Yurchuk et al.   THIN SOLID FILMS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS