Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

Title
Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 11, Pages 112904
Publisher
AIP Publishing
Online
2015-03-19
DOI
10.1063/1.4915336

Ask authors/readers for more resources

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started