Low temperature plasma-enhanced ALD TiN ultrathin films for Hf0.5 Zr0.5 O2 -based ferroelectric MIM structures
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Title
Low temperature plasma-enhanced ALD TiN ultrathin films for Hf0.5
Zr0.5
O2
-based ferroelectric MIM structures
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 214, Issue 6, Pages 1700056
Publisher
Wiley
Online
2017-03-15
DOI
10.1002/pssa.201700056
References
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Related references
Note: Only part of the references are listed.- Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
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- Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
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- Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties
- (2016) Sergei Zarubin et al. APPLIED PHYSICS LETTERS
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement
- (2016) Han Joon Kim et al. Nanoscale
- Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films
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- Ferroelectricity in undoped hafnium oxide
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- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
- (2015) Patrick D. Lomenzo et al. JOURNAL OF APPLIED PHYSICS
- Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films
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- Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
- (2014) Tony Schenk et al. ACS Applied Materials & Interfaces
- Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
- (2014) Delphine Longrie et al. ACS Applied Materials & Interfaces
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
- (2014) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
- (2013) Dayu Zhou et al. APPLIED PHYSICS LETTERS
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Ferroelectricity in hafnium oxide thin films
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- Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
- (2011) H. B. Profijt et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Investigating the TiN Film Quality and Growth Behavior for Plasma-enhanced Atomic Layer Deposition Using TiCl$_4$ and N$_2$/H$_2$/Ar Radicals
- (2010) Jin-seong Park et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
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