Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

(2016) Zhen Fan et al.   APPLIED PHYSICS LETTERS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Charge transport in amorphous Hf0.5Zr0.5O2

(2015) D. R. Islamov et al.   APPLIED PHYSICS LETTERS

Mixed Al and Si doping in ferroelectric HfO2 thin films

(2015) Patrick D. Lomenzo et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2

(2015) D. R. Islamov et al.   JETP LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

(2015) M. H. Park et al.   Journal of Materials Chemistry C

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

(2014) Y. Zhang et al.   APPLIED PHYSICS LETTERS

The effects of layering in ferroelectric Si-doped HfO2 thin films

(2014) Patrick D. Lomenzo et al.   APPLIED PHYSICS LETTERS

Voltage induced local hysteretic phase switching in silicon

(2014) Jagmeet S. Sekhon et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

(2012) J. Müller et al.   APPLIED PHYSICS LETTERS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Mechanism of the Switchable Photovoltaic Effect in Ferroelectric BiFeO3

(2011) H. T. Yi et al.   ADVANCED MATERIALS

A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

(2011) An Quan Jiang et al.   ADVANCED MATERIALS

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

(2011) Can Wang et al.   APPLIED PHYSICS LETTERS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

(2011) D. Lee et al.   PHYSICAL REVIEW B

Electroresistance effects in ferroelectric tunnel barriers

(2010) D. Pantel et al.   PHYSICAL REVIEW B

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Evaluation of Electrical Properties of Leaky BiFeO3Films in High Electric Field Region by High-Speed Positive-Up–Negative-Down Measurement

(2008) Hiroshi Naganuma et al.   Applied Physics Express