Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

(2012) Keisuke Ide et al.   JOURNAL OF APPLIED PHYSICS

Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O

(2012) Kenji Nomura et al.   ECS Journal of Solid State Science and Technology

Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In–Ga–Zn–O Channels

(2011) Lijie Shao et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory

(2010) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing

(2009) Yutomo Kikuchi et al.   THIN SOLID FILMS

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS