Al2O3∕InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy

Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy

(2011) E. A. Douglas et al.   APPLIED PHYSICS LETTERS

Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy

(2011) Jianke Yao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors

(2010) A. Suresh et al.   IEEE ELECTRON DEVICE LETTERS

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

(2010) E. Bersch et al.   JOURNAL OF APPLIED PHYSICS

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

(2009) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS

High mobility InGaZnO4 thin-film transistors on paper

(2009) Wantae Lim et al.   APPLIED PHYSICS LETTERS

Toward High-Performance Amorphous GIZO TFTs

(2009) P. Barquinha et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Electronic structure of amorphous InGaO3(ZnO)0.5 thin films

(2009) Deok-Yong Cho et al.   THIN SOLID FILMS

Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape

(2008) Wantae Lim et al.   APPLIED PHYSICS LETTERS

High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper

(2008) Elvira Fortunato et al.   IEEE ELECTRON DEVICE LETTERS

Stable room temperature deposited amorphous InGaZnO[sub 4] thin film transistors

(2008) Wantae Lim et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B