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Title
Band offsets in ZrO2/InGaZnO4 heterojunction
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 9, Pages 093508
Publisher
AIP Publishing
Online
2012-08-31
DOI
10.1063/1.4750069
References
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Related references
Note: Only part of the references are listed.- Band offsets in HfO2/InGaZnO4 heterojunctions
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- Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy
- (2011) Jianke Yao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature
- (2010) Jae Sang Lee et al. IEEE ELECTRON DEVICE LETTERS
- Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics
- (2010) Kwang Hwan Ji et al. IEEE ELECTRON DEVICE LETTERS
- Present status of amorphous In–Ga–Zn–O thin-film transistors
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- Material characteristics and applications of transparent amorphous oxide semiconductors
- (2010) Toshio Kamiya et al. NPG Asia Materials
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- Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics
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- Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy
- (2009) J. B. You et al. JOURNAL OF APPLIED PHYSICS
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
- (2009) Toshio Kamiya et al. Journal of Display Technology
- Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structure
- (2008) Seongpil Chang et al. APPLIED PHYSICS LETTERS
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