Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors

Illumination instabilities in ZnO/HfO2 thin-film transistors and influence of grain boundary charge

(2012) Jeffrey J. Siddiqui et al.   JOURNAL OF MATERIALS RESEARCH

Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

(2012) Mallory Mativenga et al.   AIP Advances

Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O

(2012) Kenji Nomura et al.   ECS Journal of Solid State Science and Technology

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

(2011) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Direct Observation of Hole Current in Amorphous Oxide Semiconductors under Illumination

(2011) Yoon Jang Chung et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Review paper: Transparent amorphous oxide semiconductor thin film transistor

(2011) Jang-Yeon Kwon et al.   Electronic Materials Letters

DC Versus Pulse-Type Negative Bias Stress Effects on the Instability of Amorphous InGaZnO Transistors Under Light Illumination

(2011) Youn-Gyoung Chang et al.   IEEE ELECTRON DEVICE LETTERS

The influence of visible light on the gate bias instability of In–Ga–Zn–O thin film transistors

(2011) Sangwook Kim et al.   SOLID-STATE ELECTRONICS

Investigation of the gate-bias induced instability for InGaZnO TFTs under dark and light illumination

(2011) T.C. Chen et al.   THIN SOLID FILMS

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

(2010) Shinhyuk Yang et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors

(2010) Edward Namkyu Cho et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals

(2010) S. J. Clark et al.   PHYSICAL REVIEW B

Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

(2009) Sangwon Lee et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses

(2008) In-Tak Cho et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY