Band offsets, Schottky barrier heights, and their effects on electronic devices

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

(2013) V. Y.-Q. Zhuo et al.   APPLIED PHYSICS LETTERS

Schottky barrier at the AlN/metal junction

(2013) Alexander Slepko et al.   JOURNAL OF APPLIED PHYSICS

Electronic surface and dielectric interface states on GaN and AlGaN

(2013) Brianna S. Eller et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate

(2013) Z.Q. Liu et al.   THIN SOLID FILMS

Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

(2012) Jens Meyer et al.   ADVANCED MATERIALS

Control of Schottky barrier heights by inserting thin dielectric layers

(2012) L. Lin et al.   APPLIED PHYSICS LETTERS

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

(2012) L. Lin et al.   APPLIED PHYSICS LETTERS

A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs

(2012) Ashish Agrawal et al.   APPLIED PHYSICS LETTERS

An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point

(2012) Z. Q. Liu et al.   JOURNAL OF MATERIALS CHEMISTRY

Dielectric function of LaAlO3 from 0.8 to 6 eV between 77 and 700 K

(2012) Cayla Marie Nelson et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Hydrogen impurity in yttria:Ab initioandμSR perspectives

(2012) E. L. Silva et al.   PHYSICAL REVIEW B

Band discontinuities at Si-TCO interfaces from quasiparticle calculations: Comparison of two alignment approaches

(2012) B. Höffling et al.   PHYSICAL REVIEW B

Electronic bands of III-V semiconductor polytypes and their alignment

(2012) Abderrezak Belabbes et al.   PHYSICAL REVIEW B

Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon

(2011) L. F. Edge et al.   APPLIED PHYSICS LETTERS

Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

(2011) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Barrier height determination of silicide-silicon contact by hybrid density functional simulation

(2011) Qun Gao et al.   APPLIED PHYSICS LETTERS

Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

(2011) Y. P. Chiu et al.   APPLIED PHYSICS LETTERS

Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices

(2011) Yiqun Liu et al.   APPLIED PHYSICS LETTERS

Atomic mechanism of electric dipole formed at high-K: SiO2 interface

(2011) L. Lin et al.   JOURNAL OF APPLIED PHYSICS

Ambiguity in the magnitude and direction of the derived interface dipole in lanthanum aluminate heterostructures: Implications and proposed solution

(2011) Z. Q. Liu et al.   JOURNAL OF APPLIED PHYSICS

Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures

(2011) Winfried Mönch   JOURNAL OF APPLIED PHYSICS

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

(2011) Poul Georg Moses et al.   JOURNAL OF CHEMICAL PHYSICS

Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

(2011) R. R. Lieten et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

(2011) I.Z. Mitrovic et al.   MICROELECTRONIC ENGINEERING

The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2

(2011) J.L. Lyons et al.   MICROELECTRONIC ENGINEERING

Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface

(2011) Yoshifumi Nishi et al.   PHYSICAL REVIEW B

Limits to doping in oxides

(2011) J. Robertson et al.   PHYSICAL REVIEW B

Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states

(2011) A. Belabbes et al.   PHYSICAL REVIEW B

Band structure calculations of CuAlO2, CuGaO2, CuInO2, and CuCrO2by screened exchange

(2011) Roland Gillen et al.   PHYSICAL REVIEW B

Solvated Electrons in High-Temperature Melts and Glasses of the Room-Temperature Stable Electride [Ca24Al28O64]4+*4e-

(2011) S. W. Kim et al.   SCIENCE

Band lineup between silicon and transparent conducting oxides

(2010) B. Höffling et al.   APPLIED PHYSICS LETTERS

Specific Contact Resistivity of Tunnel Barrier Contacts Used for Fermi Level Depinning

(2010) Arunanshu M. Roy et al.   IEEE ELECTRON DEVICE LETTERS

Theoretical and Experimental Study of the Electronic Structures of MoO3and MoO2

(2010) David O. Scanlon et al.   Journal of Physical Chemistry C

Screened exchange density functional applied to solids

(2010) Stewart J. Clark et al.   PHYSICAL REVIEW B

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

(2010) S.A. Chambers et al.   SURFACE SCIENCE REPORTS

Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations

(2009) A. Schleife et al.   APPLIED PHYSICS LETTERS

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs

(2009) M. L. Huang et al.   APPLIED PHYSICS LETTERS

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

(2009) Yong-Hua Li et al.   APPLIED PHYSICS LETTERS

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

(2009) A. L. Yang et al.   APPLIED PHYSICS LETTERS

Impact of oxide defects on band offset at GeO2/Ge interface

(2009) M. Yang et al.   APPLIED PHYSICS LETTERS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

Understanding conductivity in SrCu2O2: stability, geometry and electronic structure of intrinsic defects from first principles

(2009) Kate G. Godinho et al.   JOURNAL OF MATERIALS CHEMISTRY

Energetics of metal–organic interfaces: New experiments and assessment of the field

(2009) Jaehyung Hwang et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Band alignment at metal-semiconductor and metal-oxide interfaces

(2009) John Robertson   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Shallow donor state of hydrogen inIn2O3andSnO2: Implications for conductivity in transparent conducting oxides

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Surface potentials of magnetron sputtered transparent conducting oxides

(2009) A. Klein et al.   THIN SOLID FILMS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

(2008) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Energy-band alignments of HfO2 on p-GaAs substrates

(2008) Goutam Kumar Dalapati et al.   APPLIED PHYSICS LETTERS

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

(2008) T. D. Veal et al.   APPLIED PHYSICS LETTERS

Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study

(2008) M. Yang et al.   APPLIED PHYSICS LETTERS

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS

Linear and nonlinear optical properties of BiFeO3

(2008) Amit Kumar et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

Structure and optoelectronic properties of spray deposited Mg doped p-CuCrO2 semiconductor oxide thin films

(2008) A. C. Rastogi et al.   JOURNAL OF APPLIED PHYSICS

Hybrid functionals applied to extended systems

(2008) M Marsman et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Disorder and instability processes in amorphous conducting oxides

(2008) John Robertson   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Defect energetics in ZnO: A hybrid Hartree-Fock density functional study

(2008) Fumiyasu Oba et al.   PHYSICAL REVIEW B

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Band offsets of ultrathin high-κoxide films with Si

(2008) Eric Bersch et al.   PHYSICAL REVIEW B

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS

Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

(2008) P. D. C. King et al.   PHYSICAL REVIEW LETTERS

Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces

(2008) Chung-Lin Wu et al.   PHYSICAL REVIEW LETTERS

Defect Energy Levels in Density Functional Calculations: Alignment and Band Gap Problem

(2008) Audrius Alkauskas et al.   PHYSICAL REVIEW LETTERS

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

(2007) Huang-Chun Wen et al.   MICROELECTRONIC ENGINEERING