Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence

Published 2014 View Full Article

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Title
Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence
Authors
Keywords
-
Journal
Journal of Display Technology
Volume 10, Issue 11, Pages 975-978
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-08-28
DOI
10.1109/jdt.2014.2350518

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