High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structure

(2008) Seongpil Chang et al.   APPLIED PHYSICS LETTERS

High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

(2008) Jong H. Na et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

High mobility indium free amorphous oxide thin film transistors

(2008) Elvira M. C. Fortunato et al.   APPLIED PHYSICS LETTERS

Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films

(2007) Byung Du Ahn et al.   THIN SOLID FILMS

Transparent, high mobility InGaZnO thin films deposited by PLD

(2007) Arun Suresh et al.   THIN SOLID FILMS

Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes

(2007) Jong Hoon Kim et al.   THIN SOLID FILMS

Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes

(2007) Yasuhiro Shimura et al.   THIN SOLID FILMS