Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

Title
Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 2, Pages 022104
Publisher
AIP Publishing
Online
2011-07-13
DOI
10.1063/1.3609873

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