Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Single-Layer MoS2 Electronics

(2015) Dominik Lembke et al.   ACCOUNTS OF CHEMICAL RESEARCH

Synthesis of Centimeter-Scale Monolayer Tungsten Disulfide Film on Gold Foils

(2015) Seok Joon Yun et al.   ACS Nano

Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices

(2015) Juhong Park et al.   APPLIED PHYSICS LETTERS

Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates

(2015) A. Sanne et al.   APPLIED PHYSICS LETTERS

An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides

(2015) Hualing Zeng et al.   CHEMICAL SOCIETY REVIEWS

Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline

(2015) Qingqing Ji et al.   CHEMICAL SOCIETY REVIEWS

Physical and chemical tuning of two-dimensional transition metal dichalcogenides

(2015) Haotian Wang et al.   CHEMICAL SOCIETY REVIEWS

Phase engineering of transition metal dichalcogenides

(2015) Damien Voiry et al.   CHEMICAL SOCIETY REVIEWS

Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

(2015) Yumeng Shi et al.   CHEMICAL SOCIETY REVIEWS

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

(2015) Xidong Duan et al.   CHEMICAL SOCIETY REVIEWS

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

(2015) Xin Zhang et al.   CHEMICAL SOCIETY REVIEWS

Photocurrent generation with two-dimensional van der Waals semiconductors

(2015) Michele Buscema et al.   CHEMICAL SOCIETY REVIEWS

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

(2015) Hennrik Schmidt et al.   CHEMICAL SOCIETY REVIEWS

The Role of Transport Agents in MoS2 Single Crystals

(2015) Andrea Pisoni et al.   Journal of Physical Chemistry C

Carrier Injection and Scattering in Atomically Thin Chalcogenides

(2015) Song-Lin Li et al.   JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes

(2015) Yuan Liu et al.   NANO LETTERS

Electronic Transport of Encapsulated Graphene and WSe2 Devices Fabricated by Pick-up of Prepatterned hBN

(2015) Joel I-Jan Wang et al.   NANO LETTERS

Atomic Healing of Defects in Transition Metal Dichalcogenides

(2015) Junpeng Lu et al.   NANO LETTERS

Two-dimensional dichalcogenides for light-harvesting applications

(2015) Bo Peng et al.   Nano Today

Thickness-dependent mobility in two-dimensional MoS2transistors

(2015) Dominik Lembke et al.   Nanoscale

Growth of wafer-scale MoS2 monolayer by magnetron sputtering

(2015) Junguang Tao et al.   Nanoscale

Two-dimensional materials and their prospects in transistor electronics

(2015) F. Schwierz et al.   Nanoscale

Layer-controlled CVD growth of large-area two-dimensional MoS2films

(2015) Jaeho Jeon et al.   Nanoscale

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

(2015) Andrea C. Ferrari et al.   Nanoscale

A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2

(2015) V. Kranthi Kumar et al.   Nanoscale

Synthesis, properties and applications of 2D non-graphene materials

(2015) Feng Wang et al.   NANOTECHNOLOGY

Annealing and transport studies of suspended molybdenum disulfide devices

(2015) Fenglin Wang et al.   NANOTECHNOLOGY

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

(2015) Kibum Kang et al.   NATURE

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Silicene field-effect transistors operating at room temperature

(2015) Li Tao et al.   Nature Nanotechnology

Native defects in bulk and monolayerMoS2from first principles

(2015) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

(2015) Jingli Wang et al.   Small

Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations

(2015) Gang Hee Han et al.   Nature Communications

Exploring atomic defects in molybdenum disulphide monolayers

(2015) Jinhua Hong et al.   Nature Communications

Complex electrical permittivity of the monolayer molybdenum disulfide (MoS_2) in near UV and visible

(2015) Bablu Mukherjee et al.   Optical Materials Express

Measuring the Refractive Index of Highly Crystalline Monolayer MoS2 with High Confidence

(2015) Hui Zhang et al.   Scientific Reports

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

(2015) N. R. Pradhan et al.   Scientific Reports

Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

(2014) Thomas Heine   ACCOUNTS OF CHEMICAL RESEARCH

Synthesis and Defect Investigation of Two-Dimensional Molybdenum Disulfide Atomic Layers

(2014) Sina Najmaei et al.   ACCOUNTS OF CHEMICAL RESEARCH

Amorphous Molybdenum Sulfides as Hydrogen Evolution Catalysts

(2014) Carlos G. Morales-Guio et al.   ACCOUNTS OF CHEMICAL RESEARCH

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

(2014) Bhim Chamlagain et al.   ACS Nano

Few-Layer MoS2: A Promising Layered Semiconductor

(2014) Rudren Ganatra et al.   ACS Nano

Direct Synthesis of van der Waals Solids

(2014) Yu-Chuan Lin et al.   ACS Nano

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

(2014) Xue Liu et al.   ACS Nano

Postgrowth Tuning of the Bandgap of Single-Layer Molybdenum Disulfide Films by Sulfur/Selenium Exchange

(2014) Quan Ma et al.   ACS Nano

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes

(2014) Jing Zhang et al.   ACS Nano

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

(2014) Mei Zhang et al.   ACS Nano

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2

(2014) Xingli Wang et al.   ACS Nano

Electrical Transport Properties of Single-Layer WS2

(2014) Dmitry Ovchinnikov et al.   ACS Nano

Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals

(2014) Yao Guo et al.   ACS Nano

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

(2014) Song-Lin Li et al.   ACS Nano

Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities

(2014) Nihar R. Pradhan et al.   ACS Nano

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

(2014) Mahito Yamamoto et al.   ACS Nano

Field-Effect Transistors Built from All Two-Dimensional Material Components

(2014) Tania Roy et al.   ACS Nano

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Highly Uniform Trilayer Molybdenum Disulfide for Wafer-Scale Device Fabrication

(2014) Alexey Tarasov et al.   ADVANCED FUNCTIONAL MATERIALS

Wafer Scale Synthesis and High Resolution Structural Characterization of Atomically Thin MoS2Layers

(2014) Aaron S. George et al.   ADVANCED FUNCTIONAL MATERIALS

Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

(2014) Wei Feng et al.   ADVANCED MATERIALS

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Investigation of the optical properties of MoS2 thin films using spectroscopic ellipsometry

(2014) Chanyoung Yim et al.   APPLIED PHYSICS LETTERS

High-performance MoS2 transistors with low-resistance molybdenum contacts

(2014) Jiahao Kang et al.   APPLIED PHYSICS LETTERS

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

Scalable synthesis of layer-controlled WS2 and MoS2 sheets by sulfurization of thin metal films

(2014) Carlo M. Orofeo et al.   APPLIED PHYSICS LETTERS

Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry

(2014) Hsiang-Lin Liu et al.   APPLIED PHYSICS LETTERS

Electrostatically Reversible Polarity of Dual-Gated Graphene Transistors

(2014) Shu Nakaharai et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Effect of vacancies on structural, electronic and optical properties of monolayer MoS2: A first-principles study

(2014) Li-ping Feng et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Two-dimensional layered materials: Structure, properties, and prospects for device applications

(2014) Anupama B. Kaul   JOURNAL OF MATERIALS RESEARCH

Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties

(2014) Honglai Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

First-principles investigations on vacancy formation and electronic structures of monolayer MoS2

(2014) Li-ping Feng et al.   MATERIALS CHEMISTRY AND PHYSICS

Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

(2014) Hennrik Schmidt et al.   NANO LETTERS

Mono- and Bilayer WS2 Light-Emitting Transistors

(2014) Sanghyun Jo et al.   NANO LETTERS

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

(2014) Hsun-Jen Chuang et al.   NANO LETTERS

All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor

(2014) Saptarshi Das et al.   NANO LETTERS

Tailoring the Physical Properties of Molybdenum Disulfide Monolayers by Control of Interfacial Chemistry

(2014) Sina Najmaei et al.   NANO LETTERS

Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition

(2014) Xi Ling et al.   NANO LETTERS

Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts

(2014) Joon Young Kwak et al.   NANO LETTERS

Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates

(2014) Xin Lu et al.   NANO LETTERS

Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility

(2014) Rui Yang et al.   Nanoscale

Scalable high-mobility MoS2thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

(2014) Chung-Che Huang et al.   Nanoscale

Impact of intrinsic atomic defects on the electronic structure of MoS2monolayers

(2014) Santosh KC et al.   NANOTECHNOLOGY

High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

(2014) A Abderrahmane et al.   NANOTECHNOLOGY

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2

(2014) Yung-Chang Lin et al.   Nature Nanotechnology

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

(2014) Xidong Duan et al.   Nature Nanotechnology

Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry

(2014) R. Suzuki et al.   Nature Nanotechnology

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

(2014) F. H. L. Koppens et al.   Nature Nanotechnology

Two-dimensional material nanophotonics

(2014) Fengnian Xia et al.   Nature Photonics

Flexible and stretchable thin-film transistors based on molybdenum disulphide

(2014) Jiang Pu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides:MoS2,MoSe2,WS2, andWSe2

(2014) Yilei Li et al.   PHYSICAL REVIEW B

Group theory analysis of phonons in two-dimensional transition metal dichalcogenides

(2014) J. Ribeiro-Soares et al.   PHYSICAL REVIEW B

Chirality effect of mechanical and electronic properties of monolayer MoS2 with vacancies

(2014) Yingye Gan et al.   PHYSICS LETTERS A

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides

(2014) H. Terrones et al.   Scientific Reports

Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment

(2014) Freddie Withers et al.   Scientific Reports

Controllable Schottky Barriers between MoS2 and Permalloy

(2014) Weiyi Wang et al.   Scientific Reports

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

(2014) Leiqiang Chu et al.   Scientific Reports

Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy

(2014) A. R. Klots et al.   Scientific Reports

Layered transition metal dichalcogenides for electrochemical energy generation and storage

(2014) Martin Pumera et al.   Journal of Materials Chemistry A

Surface transport and band gap structure of exfoliated 2H-MoTe2crystals

(2014) Ignacio Gutiérrez Lezama et al.   2D Materials

Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

(2014) Rajesh Kappera et al.   APL Materials

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers

(2013) Han Liu et al.   ACS Nano

Magneto-transport in MoS2: Phase Coherence, Spin–Orbit Scattering, and the Hall Factor

(2013) Adam T. Neal et al.   ACS Nano

Conduction Tuning of Graphene Based on Defect-Induced Localization

(2013) Shu Nakaharai et al.   ACS Nano

Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

(2013) Meeghage Madusanka Perera et al.   ACS Nano

Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications

(2013) Jing-Kai Huang et al.   ACS Nano

Gigahertz Integrated Graphene Ring Oscillators

(2013) Erica Guerriero et al.   ACS Nano

Vapor–Solid Growth of High Optical Quality MoS2 Monolayers with Near-Unity Valley Polarization

(2013) Sanfeng Wu et al.   ACS Nano

Controlled Growth of High-Quality Monolayer WS2 Layers on Sapphire and Imaging Its Grain Boundary

(2013) Yu Zhang et al.   ACS Nano

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

(2013) Sheneve Z. Butler et al.   ACS Nano

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts

(2013) André Dankert et al.   ACS Nano

2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1-x)Se2xMonolayers

(2013) John Mann et al.   ADVANCED MATERIALS

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

(2013) Wei Wu et al.   APPLIED PHYSICS LETTERS

Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

(2013) N. R. Pradhan et al.   APPLIED PHYSICS LETTERS

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

(2013) Deep Jariwala et al.   APPLIED PHYSICS LETTERS

Graphene-Like Two-Dimensional Materials

(2013) Mingsheng Xu et al.   CHEMICAL REVIEWS

Suspended single-layer MoS2 devices

(2013) Taiyu Jin et al.   JOURNAL OF APPLIED PHYSICS

Substrate Mediation in Vapor Deposition Growth of Layered Chalcogenide Nanoplates: A Case Study of SnSe2

(2013) Liang Huang et al.   Journal of Physical Chemistry C

Controlled Synthesis of Highly Crystalline MoS2 Flakes by Chemical Vapor Deposition

(2013) Xinsheng Wang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Interlayer Breathing and Shear Modes in Few-Trilayer MoS2 and WSe2

(2013) Yanyuan Zhao et al.   NANO LETTERS

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

(2013) Song-Lin Li et al.   NANO LETTERS

Synthesis and Photoresponse of Large GaSe Atomic Layers

(2013) Sidong Lei et al.   NANO LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating

(2013) Sefaattin Tongay et al.   NANO LETTERS

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials

(2013) Marco Bernardi et al.   NANO LETTERS

Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces

(2013) Yi-Hsien Lee et al.   NANO LETTERS

Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors

(2013) Vinod K. Sangwan et al.   NANO LETTERS

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

(2013) Han Liu et al.   NANO LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide

(2013) Yongji Gong et al.   NANO LETTERS

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

(2013) Mei Yin Chan et al.   Nanoscale

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

(2013) H. S. Song et al.   Nanoscale

Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor

(2013) Youngbin Lee et al.   Nanoscale

Low-frequency noise in multilayer MoS2field-effect transistors: the effect of high-k passivation

(2013) Junhong Na et al.   Nanoscale

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

(2013) Arend M. van der Zande et al.   NATURE MATERIALS

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

(2013) Sina Najmaei et al.   NATURE MATERIALS

Enhanced catalytic activity in strained chemically exfoliated WS2 nanosheets for hydrogen evolution

(2013) Damien Voiry et al.   NATURE MATERIALS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

(2013) Woo Jong Yu et al.   Nature Nanotechnology

Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

(2013) B. Radisavljevic et al.   Nature Nanotechnology

Optical generation of excitonic valley coherence in monolayer WSe2

(2013) Aaron M. Jones et al.   Nature Nanotechnology

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Origin of then-type andp-type conductivity of MoS2monolayers on a SiO2substrate

(2013) Kapildeb Dolui et al.   PHYSICAL REVIEW B

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles

(2013) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

(2013) D. Jariwala et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

(2013) L. Britnell et al.   SCIENCE

Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers

(2013) Zhirui Gong et al.   Nature Communications

Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films

(2013) Yifei Yu et al.   Scientific Reports

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

(2012) Song-Lin Li et al.   ACS Nano

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

Unipolar transport in bilayer graphene controlled by multiple p-n interfaces

(2012) Hisao Miyazaki et al.   APPLIED PHYSICS LETTERS

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

(2012)   APPLIED PHYSICS LETTERS

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

(2012) Stefano Larentis et al.   APPLIED PHYSICS LETTERS

Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs

(2012) Nuo Xu et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Predicting Dislocations and Grain Boundaries in Two-Dimensional Metal-Disulfides from the First Principles

(2012) Xiaolong Zou et al.   NANO LETTERS

van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

(2012) Yumeng Shi et al.   NANO LETTERS

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

(2012) Daniele Braga et al.   NANO LETTERS

Ambipolar MoS2 Thin Flake Transistors

(2012) Yijin Zhang et al.   NANO LETTERS

Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions

(2012) Laura Giorgia Rizzi et al.   NANO LETTERS

Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

(2012) Jiang Pu et al.   NANO LETTERS

MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

(2012) Hee Sung Lee et al.   NANO LETTERS

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

(2012) Keng-Ku Liu et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Enhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgap

(2012) Alex Aparecido-Ferreira et al.   Nanoscale

High on/off ratio field effect transistors based on exfoliated crystalline SnS2nano-membranes

(2012) Debtanu De et al.   NANOTECHNOLOGY

Engineering the surface structure of MoS2 to preferentially expose active edge sites for electrocatalysis

(2012) Jakob Kibsgaard et al.   NATURE MATERIALS

Valley polarization in MoS2 monolayers by optical pumping

(2012) Hualing Zeng et al.   Nature Nanotechnology

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement

(2012) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW LETTERS

Superconducting Dome in a Gate-Tuned Band Insulator

(2012) J. T. Ye et al.   SCIENCE

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

A Molecular MoS2 Edge Site Mimic for Catalytic Hydrogen Generation

(2012) H. I. Karunadasa et al.   SCIENCE

Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

(2012) Yongjie Zhan et al.   Small

Valley-selective circular dichroism of monolayer molybdenum disulphide

(2012) Ting Cao et al.   Nature Communications

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon

(2011) Shu Nakaharai et al.   Applied Physics Express

A Comparative Study of Lattice Dynamics of Three- and Two-Dimensional MoS2

(2011) C. Ataca et al.   Journal of Physical Chemistry C

Toward the Growth of an Aligned Single-Layer MoS2Film

(2011) Daeho Kim et al.   LANGMUIR

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Facile synthesis of hierarchical MoS2microspheres composed of few-layered nanosheets and their lithium storage properties

(2011) Shujiang Ding et al.   Nanoscale

Atomically thin layers of MoS2via a two step thermal evaporation–exfoliation method

(2011) Sivacarendran Balendhran et al.   Nanoscale

Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

(2011) Jiamin Xue et al.   NATURE MATERIALS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

The promise of chalcogenides

(2011) Nadya Anscombe et al.   Nature Photonics

Multicomponent fractional quantum Hall effect in graphene

(2011) C. R. Dean et al.   Nature Physics

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

New directions in science and technology: two-dimensional crystals

(2011) A H Castro Neto et al.   REPORTS ON PROGRESS IN PHYSICS

Electronic transport in two-dimensional graphene

(2011) S. Das Sarma et al.   REVIEWS OF MODERN PHYSICS

Complementary-Like Graphene Logic Gates Controlled by Electrostatic Doping

(2011) Song-Lin Li et al.   Small

Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels

(2010) Song-Lin Li et al.   ACS Nano

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Improved thermoelectric performance of organic thin-film elements utilizing a bilayer structure of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ)

(2010) Kentaro Harada et al.   APPLIED PHYSICS LETTERS

Synthesis of metal sulfide nanomaterials via thermal decomposition of single-source precursors

(2010) Ilan Jen-La Plante et al.   JOURNAL OF MATERIALS CHEMISTRY

Low Operating Bias and Matched Input−Output Characteristics in Graphene Logic Inverters

(2010) Song-Lin Li et al.   NANO LETTERS

2D materials: to graphene and beyond

(2010) Rubén Mas-Ballesté et al.   Nanoscale

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

Mechanism for Current Saturation and Energy Dissipation in Graphene Transistors

(2010) Ashley M. DaSilva et al.   PHYSICAL REVIEW LETTERS

Deposition of High-QualityHfO2on Graphene and the Effect of Remote Oxide Phonon Scattering

(2010) K. Zou et al.   PHYSICAL REVIEW LETTERS

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Resistance modulation of multilayer graphene controlled by the gate electric field

(2010) Hisao Miyazaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Facile synthesis of zirconium trisulfide and hafnium trisulfide nanobelts: Growth mechanism and Raman spectroscopy

(2010) Hua Jin et al.   SOLID STATE SCIENCES

Logic gates with a single graphene transistor

(2009) Roman Sordan et al.   APPLIED PHYSICS LETTERS

Integrated complementary graphene inverter

(2009) Floriano Traversi et al.   APPLIED PHYSICS LETTERS

Effect of a High-κEnvironment on Charge Carrier Mobility in Graphene

(2009) L. A. Ponomarenko et al.   PHYSICAL REVIEW LETTERS

Graphene: Status and Prospects

(2009) A. K. Geim   SCIENCE

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Electrostatic interactions between graphene layers and their environment

(2008) J. Sabio et al.   PHYSICAL REVIEW B

Substrate-limited electron dynamics in graphene

(2008) S. Fratini et al.   PHYSICAL REVIEW B

Single-particle relaxation time versus transport scattering time in a two-dimensional graphene layer

(2008) E. H. Hwang et al.   PHYSICAL REVIEW B