High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Published 2014 View Full Article

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Title
High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide
Authors
Keywords
-
Journal
ACS Nano
Volume 8, Issue 10, Pages 10396-10402
Publisher
American Chemical Society (ACS)
Online
2014-09-30
DOI
10.1021/nn505253p

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