Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates
Authors
Keywords
-
Journal
Nanoscale
Volume 5, Issue 20, Pages 9572
Publisher
Royal Society of Chemistry (RSC)
Online
2013-08-08
DOI
10.1039/c3nr03220e
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices
- (2012) Michael S. Bresnehan et al. ACS Nano
- Kim et al. reply
- (2012) Seungchul Kim et al. NATURE
- Temperature dependence of the conductivity of graphene on boron nitride
- (2012) Jürgen Schiefele et al. PHYSICAL REVIEW B
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate
- (2012) Yongjie Zhan et al. Small
- Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- (2011) Subhamoy Ghatak et al. ACS Nano
- A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
- (2011) P. J. Zomer et al. APPLIED PHYSICS LETTERS
- Carrier mobility in organic field-effect transistors
- (2011) Yong Xu et al. JOURNAL OF APPLIED PHYSICS
- Atomically thin layers of MoS2via a two step thermal evaporation–exfoliation method
- (2011) Sivacarendran Balendhran et al. Nanoscale
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
- (2010) Changgu Lee et al. ACS Nano
- Low Operating Bias and Matched Input−Output Characteristics in Graphene Logic Inverters
- (2010) Song-Lin Li et al. NANO LETTERS
- On Resonant Scatterers As a Factor Limiting Carrier Mobility in Graphene
- (2010) Z. H. Ni et al. NANO LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
- Charged-impurity scattering in graphene
- (2008) J.-H. Chen et al. Nature Physics
- Electron scattering on microscopic corrugations in graphene
- (2007) M.I Katsnelson et al. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started