Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

(2011) Kangho Lee et al.   ADVANCED MATERIALS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Visibility of dichalcogenide nanolayers

(2011) M M Benameur et al.   NANOTECHNOLOGY

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Current saturation in zero-bandgap, top-gated graphene field-effect transistors

(2008) Inanc Meric et al.   Nature Nanotechnology

Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

(2008) Xinran Wang et al.   PHYSICAL REVIEW LETTERS

Ultrahigh electron mobility in suspended graphene

(2008) K.I. Bolotin et al.   SOLID STATE COMMUNICATIONS