High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
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Title
High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 14, Pages 142106
Publisher
AIP Publishing
Online
2013-04-12
DOI
10.1063/1.4801861
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Related references
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- (2009) X. Li et al. SCIENCE
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