Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
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Title
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 17, Pages 173107
Publisher
AIP Publishing
Online
2013-05-03
DOI
10.1063/1.4803920
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Related references
Note: Only part of the references are listed.- Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
- (2013) N. R. Pradhan et al. APPLIED PHYSICS LETTERS
- High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
- (2013) Wenzhong Bao et al. APPLIED PHYSICS LETTERS
- Reply to 'Measurement of mobility in dual-gated MoS2 transistors'
- (2013) B. Radisavljevic et al. Nature Nanotechnology
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
- (2012) Dattatray J. Late et al. ADVANCED FUNCTIONAL MATERIALS
- High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared
- (2012) Woong Choi et al. ADVANCED MATERIALS
- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
- (2012) APPLIED PHYSICS LETTERS
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
- (2012) Stefano Larentis et al. APPLIED PHYSICS LETTERS
- $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
- (2012) Han Liu et al. IEEE ELECTRON DEVICE LETTERS
- Mobility enhancement and highly efficient gating of monolayer MoS2transistors with polymer electrolyte
- (2012) Ming-Wei Lin et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- Ambipolar MoS2 Thin Flake Transistors
- (2012) Yijin Zhang et al. NANO LETTERS
- MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
- (2012) Hee Sung Lee et al. NANO LETTERS
- Tightly bound trions in monolayer MoS2
- (2012) Kin Fai Mak et al. NATURE MATERIALS
- Valley polarization in MoS2 monolayers by optical pumping
- (2012) Hualing Zeng et al. Nature Nanotechnology
- Control of valley polarization in monolayer MoS2 by optical helicity
- (2012) Kin Fai Mak et al. Nature Nanotechnology
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Valley-selective circular dichroism of monolayer molybdenum disulphide
- (2012) Ting Cao et al. Nature Communications
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- (2011) Subhamoy Ghatak et al. ACS Nano
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
- (2010) Changgu Lee et al. ACS Nano
- Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3Nanodevices
- (2010) Hadar Steinberg et al. NANO LETTERS
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Band-like temperature dependence of mobility in a solution-processed organic semiconductor
- (2010) Tomo Sakanoue et al. NATURE MATERIALS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
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