Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

(2013) B. Radisavljevic et al.   Nature Nanotechnology

Piezoelectric surface acoustical phonon limited mobility of electrons in graphene on a GaAs substrate

(2013) S. H. Zhang et al.   PHYSICAL REVIEW B

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

(2012) Stefano Larentis et al.   APPLIED PHYSICS LETTERS

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Intrinsic Piezoelectricity in Two-Dimensional Materials

(2012) Karel-Alexander N. Duerloo et al.   Journal of Physical Chemistry Letters

Acoustic phonon-limited resistivity of spin–orbit coupled two-dimensional electron gas: the deformation potential and piezoelectric scattering

(2012) Tutul Biswas et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Ambipolar MoS2 Thin Flake Transistors

(2012) Yijin Zhang et al.   NANO LETTERS

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

(2012) Keng-Ku Liu et al.   NANO LETTERS

Valley polarization in MoS2 monolayers by optical pumping

(2012) Hualing Zeng et al.   Nature Nanotechnology

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Interplay between phonon and impurity scattering in two-dimensional hole transport

(2012) Hongki Min et al.   PHYSICAL REVIEW B

Symmetry-dependent phonon renormalization in monolayer MoS2transistor

(2012) Biswanath Chakraborty et al.   PHYSICAL REVIEW B

Unraveling the acoustic electron-phonon interaction in graphene

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Designing Electrical Contacts toMoS2Monolayers: A Computational Study

(2012) Igor Popov et al.   PHYSICAL REVIEW LETTERS

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Valley-selective circular dichroism of monolayer molybdenum disulphide

(2012) Ting Cao et al.   Nature Communications

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Low-temperature photocarrier dynamics in monolayer MoS2

(2011) T. Korn et al.   APPLIED PHYSICS LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Linear density response function in the projector augmented wave method: Applications to solids, surfaces, and interfaces

(2011) Jun Yan et al.   PHYSICAL REVIEW B

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Electronic transport in two-dimensional graphene

(2011) S. Das Sarma et al.   REVIEWS OF MODERN PHYSICS

Electronic structure calculations with GPAW: a real-space implementation of the projector augmented-wave method

(2010) J Enkovaara et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons

(2010) Eduardo V. Castro et al.   PHYSICAL REVIEW LETTERS

Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities

(2010) Dmitri K. Efetov et al.   PHYSICAL REVIEW LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Electronic structure of two-dimensional crystals fromab initiotheory

(2009) S. Lebègue et al.   PHYSICAL REVIEW B

Localized atomic basis set in the projector augmented wave method

(2009) A. H. Larsen et al.   PHYSICAL REVIEW B

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

(2008) A. Das et al.   Nature Nanotechnology

Limit to two-dimensional mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 million

(2008) E. H. Hwang et al.   PHYSICAL REVIEW B

Substrate-limited electron dynamics in graphene

(2008) S. Fratini et al.   PHYSICAL REVIEW B

Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

(2008) E. H. Hwang et al.   PHYSICAL REVIEW B