Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Authors
Keywords
-
Journal
Nature Communications
Volume 5, Issue 1, Pages -
Publisher
Springer Nature
Online
2014-10-20
DOI
10.1038/ncomms6290
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition
- (2014) Hennrik Schmidt et al. NANO LETTERS
- Tailoring the Physical Properties of Molybdenum Disulfide Monolayers by Control of Interfacial Chemistry
- (2014) Sina Najmaei et al. NANO LETTERS
- MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
- (2014) Steven Chuang et al. NANO LETTERS
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Suspended single-layer MoS2 devices
- (2013) Taiyu Jin et al. JOURNAL OF APPLIED PHYSICS
- Direct Imaging of Charged Impurity Density in Common Graphene Substrates
- (2013) Kristen M. Burson et al. NANO LETTERS
- Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
- (2013) Han Liu et al. NANO LETTERS
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
- (2013) Britton W. H. Baugher et al. NANO LETTERS
- Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates
- (2013) Mei Yin Chan et al. Nanoscale
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
- (2013) Woo Jong Yu et al. Nature Nanotechnology
- Ultrasensitive photodetectors based on monolayer MoS2
- (2013) Oriol Lopez-Sanchez et al. Nature Nanotechnology
- From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation
- (2013) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Mobility enhancement and temperature dependence in top-gated single-layer MoS2
- (2013) Zhun-Yong Ong et al. PHYSICAL REVIEW B
- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
- (2012) APPLIED PHYSICS LETTERS
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
- (2012) Stefano Larentis et al. APPLIED PHYSICS LETTERS
- Selective Adsorption of Thiol Molecules at Sulfur Vacancies on MoS2(0001), Followed by Vacancy Repair via S–C Dissociation
- (2012) Marina Makarova et al. Journal of Physical Chemistry C
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
- (2012) Hannu-Pekka Komsa et al. PHYSICAL REVIEW LETTERS
- Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- (2011) Subhamoy Ghatak et al. ACS Nano
- Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
- (2011) Leitao Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Origin of spatial charge inhomogeneity in graphene
- (2009) Yuanbo Zhang et al. Nature Physics
- Spatially resolved spectroscopy of monolayer graphene onSiO2
- (2009) A. Deshpande et al. PHYSICAL REVIEW B
- Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping
- (2009) H. Xie et al. PHYSICAL REVIEW B
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started