Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Identification of individual and few layers of WS2 using Raman Spectroscopy

(2013) Ayse Berkdemir et al.   Scientific Reports

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS2

(2012) Kouji Taniguchi et al.   APPLIED PHYSICS LETTERS

Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers

(2012) Humberto R. Gutiérrez et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS

MoS2 and WS2 Analogues of Graphene

(2010) H. S. S. Ramakrishna Matte et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions

(2010) Myrsini Lafkioti et al.   NANO LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS