Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Performance Potential and Limit of MoS2Transistors

(2015) Xuefei Li et al.   ADVANCED MATERIALS

Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures

(2015) Xiaolong Chen et al.   Nature Communications

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

(2014) Angelica Azcatl et al.   APPLIED PHYSICS LETTERS

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

(2014) Leiqiang Chu et al.   Scientific Reports

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

(2013) Stephen McDonnell et al.   ACS Nano

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy

(2013) Nardeep Kumar et al.   JOURNAL OF APPLIED PHYSICS

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

(2013) Song-Lin Li et al.   NANO LETTERS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition

(2012) Han Liu et al.   APPLIED PHYSICS LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

(2012) Woo Jong Yu et al.   NATURE MATERIALS

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor

(2011) Huilong Xu et al.   ACS Nano

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

A Raman Spectroscopic Study of MoS2 and MoO3: Applications to Tribological Systems

(2011) Bret C. Windom et al.   TRIBOLOGY LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

(2009) Wenjuan Zhu et al.   PHYSICAL REVIEW B