Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
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Title
Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 6, Pages 062101
Publisher
AIP Publishing
Online
2015-02-10
DOI
10.1063/1.4907885
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